Analytic modeling of a hybrid power module based on diamond and SiC devices by Couret, M., Castelan, A., Donato, N., Udrea, F., Pernot, J., Rouger, N., 2022. Diamond and Related Materials 124, 108936. https://doi.org/10.1016/j.diamond.2022.108936
Recent Progresses in Deep Depletion Diamond Metal Oxide Semiconductor Field Effect Transistor by Masante, C., Rouger, N., Pernot, J., 2021. J. Phys. D: Appl. Phys. 54, 233002. https://doi.org/10.1088/1361-6463/abe8fe
State-Space Simulation of Electric-Arc Faults by Chabert, A., Schweitzer, P., Weber, S., Andrea, J., 2021. IEEE Transactions on Aerospace and Electronic Systems 1–1. https://doi.org/10.1109/TAES.2021.3118962
Electro-thermal simulations of a diamond MOSFET – by M. Couret, A. Castelan, J. Letellier, K. Driche, J. Pernot and N. Ruuger, poster presented at SBDD XXVI – Hasselt Diamond workshop March 2022, Belgium
Nicolas Rouger. Optimal design of diamond field effect transistors towards a key milestone for diamond
power electronics, invited speaker, in 2022 MRS Spring Meeting and Exhibit – Symposium EQ01 : Ultra-Wide Bandgap Materials and Devices, May 2022. Oral presentation
Marine Couret, Nicolas Rouger, Anne Castelan, Khaled Driche, Juliette Letellier, and Julien Pernot.
Source field-plated deep-depletion diamond mosfets. In 2022 MRS Spring Meeting and Exhibit – Symposium EQ01 : Ultra-Wide Bandgap Materials and Devices, May 2022. Oral presentation